Heat treatment of Si single crystal
US5834322A · kind A · utility
10Cited by
20References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 22, 1997 |
| Grant date | Nov 10, 1998 |
| Priority date | — |
| Expiry date | Aug 22, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3225
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The method of this invention for heat treatment of a Si single crystal grown by the Czochralski method at a speed of pull of not less than 0.8 mm/min., characterized by heat-treating at a temperature in the range of from 1,150.degree. C. to 1,280.degree. C. a wafer cut out of the Si single crystal thereby producing a Si wafer excellent in oxide film dielectric breakdown voltage characteristic due to elimination of crystal defects. Consequently, this invention ensures production of LSI in a high yield.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.