Field-effect transistor for one-time programmable nonvolatile memory element

US5834813A · kind A · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Manny K. F. Ma · Boise, US
• Rajesh Somasekharan · Boise, US
• Wen Li · Sha Tin, CN

Key dates

• Filing date: May 23, 1996
• Grant date: Nov 10, 1998
• Expiry date: May 23, 2016

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S257/901

Abstract

A least one one-time programmable nonvolatile (NV) memory element uses a field-effect transistor (FET) as a selectively programmed element. A short duration applied drain voltage exceeding the FET's drain-to-source breakdown voltage results in a drain source resistance which is substantially unaffected by the voltages typically applied at the gate terminal. Since the programmed resistance is less than 200 ohms and a high programming voltage is not required, the present invention compares favorably with antifuse nonvolatile memory techniques. The nonvolatile memory element is implemented without adding complexity to a very large scale integrated (VLSI) circuit process.