Variable high temperature chuck for high density plasma chemical vapor deposition
US5835334A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 1996 |
| Grant date | Nov 10, 1998 |
| Priority date | — |
| Expiry date | Sep 30, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T279/23
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electrostatic chuck comprises an electrode cap with a dielectric layer for attracting and holding the back side of a semiconductor wafer positioned on the top surface of the dielectric layer, and a lower electrode. The electrostatic chuck is heated by resistive heating elements attached to or embedded within the chuck. The electrostatic chuck is cooled by circulating liquid coolant through the body of the chuck. Coolant gas is provided at the back side of the semiconductor wafer to improve thermal transfer. A feedback control mechanism maintains the chuck, and consequently the wafer, at a predetermined temperature by actively controlling both the heating and the cooling functions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.