Method to form hemi-spherical grain (HSG) silicon
US5837580A · kind A · utility
67Cited by
10References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 23, 1997 |
| Grant date | Nov 17, 1998 |
| Priority date | — |
| Expiry date | Apr 23, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/964
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An embodiment of the present invention develops a process for forming Hemi-Spherical Grained silicon by the steps of: forming amorphous silicon from a gas source comprising at least one of dichlorosilane, disilane or trisilane, wherein the amorphous silicon comprising at least one impurity doped amorphous portion, the amorphous silicon is deposited at a deposition temperature no greater than 525.degree. C.; and annealing the amorphous silicon for a sufficient amount of time and at an elevated annealing temperature, thereby transforming the amorphous silicon into the Hemi-Spherical Grained silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.