Lyle Breiner
34Patents
14h-index
25Co-inventors
77Inventor score
Filing activity: Nov 15, 1993 → Mar 14, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7422635B2 | Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces | Chemistry; Metallurgy | 456 | Expired |
| US6551893B1 | Atomic layer deposition of capacitor dielectric | Electricity | 135 | Expired |
| US6298470A | Method for efficient manufacturing of integrated circuits | Electricity | 92 | Expired |
| US5656531A | Method to form hemi-spherical grain (HSG) silicon from amorphous silicon | Emerging Cross-Sectional Technologies | 78 | Expired |
| US5837580A | Method to form hemi-spherical grain (HSG) silicon | Emerging Cross-Sectional Technologies | 67 | Expired |
| US6526547B2 | Method for efficient manufacturing of integrated circuits | Electricity | 36 | Expired |
| US7647886B2 | Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers | Emerging Cross-Sectional Technologies | 31 | Active |
| US6388284B2 | Capacitor structures | Electricity | 26 | Expired |
| US6458714B1 | Method of selective oxidation in semiconductor manufacture | Electricity | 25 | Expired |
| US6291289A | Method of forming DRAM trench capacitor with metal layer over hemispherical grain polysilicon | Electricity | 23 | Expired |
| US7440255B2 | Capacitor constructions and methods of forming | Electricity | 20 | Expired |
| US6121081A | Method to form hemi-spherical grain (HSG) silicon | Emerging Cross-Sectional Technologies | 18 | Expired |
| US7056806B2 | Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces | Chemistry; Metallurgy | 16 | Expired |
| US5880036A | Method for enhancing oxide to nitride selectivity through the use of independent heat control | Electricity | 15 | Expired |
| US7112544B2 | Method of atomic layer deposition on plural semiconductor substrates simultaneously | Electricity | 9 | Expired |
| US7235138B2 | Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces | Emerging Cross-Sectional Technologies | 8 | Expired |
| US7258892B2 | Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition | Chemistry; Metallurgy | 7 | Expired |
| US7344755B2 | Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers | Chemistry; Metallurgy | 7 | Expired |
| US6835674B2 | Methods for treating pluralities of discrete semiconductor substrates | Electricity | 6 | Expired |
| US7220312B2 | Methods for treating semiconductor substrates | Electricity | 4 | Expired |
| US7183208B2 | Methods for treating pluralities of discrete semiconductor substrates | Electricity | 4 | Expired |
| US7906393B2 | Methods for forming small-scale capacitor structures | Electricity | 4 | Active |
| US7321148B2 | Capacitor constructions and rugged silicon-containing surfaces | Emerging Cross-Sectional Technologies | 3 | Expired |
| US6881636B2 | Methods of forming deuterated silicon nitride-containing materials | Electricity | 3 | Expired |
| US7279398B2 | Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces | Chemistry; Metallurgy | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.