FBI etching enhanced with 1,2 di-iodo-ethane
US5840630A · kind A · utility
21Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 20, 1996 |
| Grant date | Nov 24, 1998 |
| Priority date | — |
| Expiry date | Dec 20, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3174
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A focused ion beam is used to etch material from a specimen while directing a vapor of 1,2 di-iodo-ethane at the surface being etched. The etch rate is accelerated for surfaces of aluminum and gold relative to the etch rate without use of 1,2 di-iodo-ethane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.