Method for multi-zone high-density inductively-coupled plasma generation
US5846883A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 10, 1996 |
| Grant date | Dec 8, 1998 |
| Priority date | — |
| Expiry date | Jul 10, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A multi-zone high-density inductively-coupled plasma source includes a first individually controlled RF antenna segment for producing a plasma from a process gas. A second individually controlled coil segment is included in the ICP source for producing a plasma from a process gas. In various embodiments, more than two sets of individually controlled coil segments may be used. In one embodiment, a separate power supply may be used for each coil segment individually. Another aspect of this invention is a hermetically-sealed inductively-coupled plasma source structure and method of fabrication which eliminates the possibility of process contamination, improves the source hardware reliability and functionality, and improves the vacuum integrity and ultimate base pressure of the plasma system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.