Method and apparatus for run-time correction of proximity effects in pattern generation
US5847959A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 1997 |
| Grant date | Dec 8, 1998 |
| Priority date | — |
| Expiry date | Jan 28, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/143
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron beam pattern generating system for exposing a pattern on a substrate using a raster scan method. The system stores a rasterized representation of the pattern as a plurality of regular pixel dose exposure levels. These pixel dose exposure levels are evaluated by the system for one or more proximity effects and corrections to the dose exposure level and/or pixel location are calculated. The system includes apparatus for both calculation and storage of intermediate and final results as required. As they are calculated, the corrections are provided to an exposure dose modulator wherein they are applied to forming the pattern. Thus corrections for both long range and short range proximity effects due to both electron scattering and heating as well as for proximity effects due to global thermal expansion can be calculated and provided during run-time and a corrected pattern exposed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.