Patent · US Expired

Process for producing and inspecting a lithographic reticle and fabricating semiconductor devices using same

US5849440A · kind A · utility

67Cited by
2References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 29, 1997
Grant dateDec 15, 1998
Priority date
Expiry dateJan 29, 2017

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/70633
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A process for fabricating a semiconductor device includes the formation of a lithographic reticle (20) having a lithographic pattern (18) overlying a reticle substrate (10). In one embodiment, a reticle inspection database incorporates altered resolution assisting features (30,32) to inspect the lithographic pattern (18). The dimensional difference between the reticle inspection database and the lithographic reticle is substantially equal to the process bias realized during reticle fabrication. Inspection of the lithographic reticle (20) using a reticle inspection database containing altered resolution assisting features reduces the false detection of defects and provides increased sensitivity in the reticle inspection process.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.