Method for producing a semiconductor device comprising an implantation step
US5849620A · kind A · utility
5Cited by
8References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 1995 |
| Grant date | Dec 15, 1998 |
| Priority date | — |
| Expiry date | Oct 30, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a semiconductor device having a semiconductor layer of SiC is disclosed. The method comprises the steps of applying an insulation layer on the semiconductor layer, implanting first impurity dopant into the semiconductor layer, and annealing this layer at at least about 1500.degree. C. so that the implanted first impurity dopant is activated, wherein the insulating layer comprises AlN as a major component and the insulating layer is applied before the annealing step and maintained on the semiconductor layer during the annealing step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.