Deposition of high quality conformal silicon oxide thin films for the manufacture of thin film transistors
US5851602A · kind A · utility
32Cited by
4References
5Claims
0Family size
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Key dates
| Filing date | Aug 26, 1996 |
| Grant date | Dec 22, 1998 |
| Priority date | — |
| Expiry date | Aug 26, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma enhanced chemical vapor deposition process for depositing conformal silicon oxide thin films useful to make thin film transistors which have stable electrical properties and low charge centers onto a substrate comprising flowing a precursor gas mixture of silane and nitrous oxide, the latter at a high rate, at a pressure of at least about 0.8 torr and a temperature of from about 250.degree. to 350.degree. C. The effective volume of the reaction region between the gas manifold inlet and the substrate during processing is kept small.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.