Method of large angle tilt implant of channel region
US5851886A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 23, 1995 |
| Grant date | Dec 22, 1998 |
| Priority date | — |
| Expiry date | Oct 23, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A channel region formation process in field effect transistors directed toward reducing threshold voltage sensitivity to variations in gate length resulting from manufacturing techniques. A polysilicon gate is formed over the substrate and a channel region is subsequently implanted at a large angle measured from perpendicular to the substrate. Large angle implantation results in a non-uniform doping concentration in the channel region, improving threshold voltage sensitivity. Improvement can also be seen in other parameters, including source-drain current, substrate current, leakage current, magnification factor, and hot electron channel injection efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.