Method of forming stacked capacitor having corrugated side-wall structure
US5851898A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 1996 |
| Grant date | Dec 22, 1998 |
| Priority date | — |
| Expiry date | Aug 23, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/043
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a capacitor that has improved charge storage capability and a capacitor produced by such method are provided. The method utilizes an additional layer of oxide spacer consisting of a plurality of oxide layers deposited by two alternating methods of thermal CVD and plasma CVD. After a contact hole is first etched by a plasma etching technique, the hole is again etched by an etchant such as hydrogen fluoride which has a high selectivity toward oxide layers formed by the plasma CVD method and a low selectivity toward oxide layers formed by the thermal CVD method. As a result, a corrugated side-wall of the contact hole is formed which affords the capacitor cell with a substantially increased surface area leading to an improved charge storage capability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.