High power HFET with improved channel interfaces

US5856684A · kind A · utility

Assignee

• Motorola, Inc. · US

Inventors

• Yang Wang · Chandler, US
• Majid M. Hashemi · Tempe, US
• Kurt Eisenbeiser · Tempe, US
• Jenn Hwa Huang · Chandler, US

Key dates

• Filing date: Sep 12, 1996
• Grant date: Jan 5, 1999
• Expiry date: Sep 12, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/801

Abstract

A high power heterojunction field effect transistor comprising a first barrier layer including a semiconductor material having a band gap, a second barrier layer including a semiconductor material having a band gap, a channel layer including a semiconductor material having a band gap narrower than the band gaps of the material included in the first barrier layer and the second barrier layer and sandwiched therebetween and an interface layer sandwiched between the channel layer and the first barrier layer.