Apparatus and method for fabricating metal paths in semiconductor substrates through high pressure extrusion
US5857368A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 1995 |
| Grant date | Jan 12, 1999 |
| Priority date | — |
| Expiry date | Nov 21, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49993
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high pressure metallization apparatus provides a chamber for enclosing or enveloping a substrate in a high pressure environment, and thereby extrude a film layer into any voids in the covers holes or trenches thereon. The high pressure is maintained in a pressure chamber, which is substantially enclosed within a vacuum chamber. The apparatus includes a positioning member which relatively rigidly positions the pressure chamber plugs during high pressure operations, and also allows separation of the plugs to enable pressure chamber access. The apparatus is configured for relatively rapid access to the internal components thereof, for rapid service and cleaning turnaround. Additionally, the chamber is configured to have minimal relative movement between the structural elements thereof, to reduce particle generation in the apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.