Use of MEV implantation to form vertically modulated N+ buried layer in an NPN bipolar transistor
US5858828A · kind A · utility
37Cited by
8References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 18, 1997 |
| Grant date | Jan 12, 1999 |
| Priority date | — |
| Expiry date | Feb 18, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/95
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
High energy implantation through varying vertical thicknesses of one or more films is used to form a vertically modulated sub-collector, which simultaneously reduces both the vertical and lateral components of parasitic collector resistance in a vertically integrated bipolar device. The need for a sinker implant or other additional steps to reduce collector resistance is avoided. The necessary processing modifications may be readily integrated into conventional bipolar or BiCMOS process flows.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.