Process for producing quantum fine wire
US5858862A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 1997 |
| Grant date | Jan 12, 1999 |
| Priority date | — |
| Expiry date | Mar 24, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/605
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process of producing quantum fine wires, it is called silicon nanowires, too, which allows silicon quantum fine wires to grow into desirable shapes. In this process, gold is deposited on a silicon substrate to a thickness of 5 nm or less, and the silicon substrate is heated at a temperature of 450.degree. C. to 650.degree. C. in an atmosphere containing silane gas at a pressure less than 0.5 Torr, whereby drops of a molten alloy of silicon and gold are formed on the surface of the silicon substrate and the silane gas is decomposed by the action of the molten alloy drops as catalyst, to allow silicon quantum fine wires to grow into such desirable shapes as to be uniform in diameter without any bending.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.