Method of making an inverse-T tungsten gate
US5858867A · kind A · utility
20Cited by
11References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 20, 1996 |
| Grant date | Jan 12, 1999 |
| Priority date | — |
| Expiry date | May 20, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A technique for fabricating an integrated circuit device 100 using an inverse-T tungsten gate structure 121 overlying a silicided layer 119 is provided. This technique uses steps of forming a high quality gate oxide layer 115 overlying a semiconductor substrate 111. The silicided layer 119 is defined overlying the gate oxide layer 115. The silicided layer 119 does not substantially react to this layer. The technique defines the inverse-T tungsten gate electrode layer 121 overlying the silicided layer 119. A top surface of this gate electrode may also be silicided 127 to further reduce the resistance of this device element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.