Semiconductor wafer etching method and post-etching process
US5858878A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 20, 1996 |
| Grant date | Jan 12, 1999 |
| Priority date | — |
| Expiry date | Dec 20, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/907
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a method including the main etching step for etching a semiconductor wafer having a resist film serving as an etching mask by plasma of an etching gas, and an post-processing step for processing the object after the main etching so as to remove remaining part of the resist film, a polymer adhered to the surface of the object, and a damage layer created during the primary etching. In the post-processing step, O.sub.2 gas is made into plasma, by which the remaining part of the resist layer, and the polymer adhered to the surface of the object are removed, and after such a process is substantially finished, a mixture gas including a halogen-containing gas such as CF.sub.4 and O.sub.2 gas is made into plasma, by which the damage layer is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.