Deposition of high quality conformal silicon oxide thin films on glass substrates
US5861197A · kind A · utility
20Cited by
4References
2Claims
0Family size
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Key dates
| Filing date | Oct 23, 1996 |
| Grant date | Jan 19, 1999 |
| Priority date | — |
| Expiry date | Oct 23, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma enhanced chemical vapor deposition process for depositing conformal silicon oxide thin films useful to make thin film transistors which have stable electrical properties and low charge centers onto a substrate comprising flowing a precursor gas mixture of silane and nitrous oxide, the latter at a high rate, at a pressure of at least about 0.8 torr and a temperature of from about 250.degree. to 350.degree. C. The effective volume of the reaction region between the gas manifold inlet and the substrate during processing is kept small.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.