Graded concentration epitaxial substrate for semiconductor device having resurf diffusion
US5861657A · kind A · utility
13Cited by
3References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 15, 1997 |
| Grant date | Jan 19, 1999 |
| Priority date | — |
| Expiry date | Jan 15, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The epitaxial substrate of a semiconductor chip device has a resurf diffusion in at least one of its isolated wells in the device chip surface. The wells are separated by junction diffusions. The thickness of the epitaxial layer is reduced by placing an increased percentage of its total charge for given a breakdown voltage (punch-through voltage) in the lower portion of the layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.