Slurry formulation for chemical mechanical polishing of metals
US5866031A · kind A · utility
61Cited by
34References
25Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 19, 1996 |
| Grant date | Feb 2, 1999 |
| Priority date | — |
| Expiry date | Jun 19, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K3/1463
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Buffered slurries are used in a semiconductor process for chemical mechanical polishing of metal layers, such as aluminum or titanium. The slurries may comprise an oxidant capable of causing a passive oxide film to form on a metal based layer. The oxidant may comprise a diluent and may be optionally formulated with a separate oxidizing agent, such as ammonium peroxydisulfate. The slurries may include a buffer that maintains a slurry pH where the passive metal oxide film is stable. This pH may be between about 4 and about 9.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.