Plasma processing apparatus
US5868848A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 6, 1996 |
| Grant date | Feb 9, 1999 |
| Priority date | — |
| Expiry date | Jun 6, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S156/915
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed is an etching apparatus for etching wafer W held on an electrostatic chuck 11 by using a plasma generated in a space between an upper electrode 21 and a susceptor 5 in a processing chamber 2. The plasma is generated by supplying a high frequency power from a high frequency power supply 43 via a power supply line 42. The etching apparatus includes a measuring electrode 18 made of silicon, attached to a focus-ring 17 provided around wafer W. The measuring electrode 18 can be electrically connected to a susceptor 5. A lead wire 44 is used, an end of which is connected to the power supply bar 42 and the other end of which is connected to a voltage indicator 46 for monitoring V.sub.DC via an RF filter 45. The V.sub.DC level having a constant correlation with the V.sub.DC generated on wafer W, can be detected through monitoring by the voltage indicator 46.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.