Method and apparatus for cleaning of semiconductor substrates using hydrofluoric acid (HF)
US5868863A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 1997 |
| Grant date | Feb 9, 1999 |
| Priority date | — |
| Expiry date | Jan 30, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S134/902
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A cleaning method and apparatus using very dilute hydrofluoric acid (HF) for cleaning silicon wafers and semiconductor substrates. The HF is delivered to the core of a brush where the solution is absorbed by the brush and then applied by the brush onto the substrate. This delivery system applies the chemical solutions uniformly to the semiconductor substrate and reduces the volumes of chemical solutions used in a scrubbing process. The process of the present invention uses very dilute HF and allows a thin oxide to be etched but not completely removed so as to maintain a hydrophilic surface state. Thus, this invention presents a chemical mechanical cleaning process with in-situ etching with the use of PVA brushes on a brush scrubber. Very accurate control of etch rate is obtained and, therefore, makes this process suitable to multiple cleaning applications of silicon wafers and semiconductor substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.