Apparatus and method for controlling process chamber pressure
US5871813A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 5, 1997 |
| Grant date | Feb 16, 1999 |
| Priority date | — |
| Expiry date | Mar 5, 2017 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB01J3/02
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
The present invention provides an apparatus and methods for controlling gas pressure within a semiconductor process chamber. The apparatus comprises a fluid conduit, and a throttle valve positioned downstream of the process chamber outlet for controlling gas flow therethrough. A filter is disposed between the inlet of the fluid conduit and the throttle valve for collecting gas particles flowing through the fluid conduit to inhibit gas deposition on the throttle valve. In addition, the filter functions as a flow restrictor to reduce the gas flow rate through the fluid conduit. This allows the throttle valve to operate in a more open position for a particular desired gas pressure, which usually reduces the amount of throttle valve surfaces exposed to gas passing therethrough. Accordingly, the amount of gas deposited on these surfaces is further reduced. This configuration minimizes any friction between valve surfaces, which increases the lifetime of the throttle valve and the throughput of the process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.