Method for fabricating electrodes of a semiconductor capacitor
US5872041A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 1997 |
| Grant date | Feb 16, 1999 |
| Priority date | — |
| Expiry date | Sep 18, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A method for fabricating electrodes of a capacitor over a semiconductor substrate is disclosed. The method includes the steps of: forming a base insulating layer over the semiconductor substrate; forming a stacked layer, including an insulating layer and a mask layer, over the base insulating layer; defining the stacked layer to form an opening to the base insulating layer; forming a first conducting layer over the stacked layer; forming a spacer on the sidewall of the first conducting layer in the opening; etching the bottom of the opening by using the mask layer and the spacer as a mask to expose a portion of the semiconductor substrate; forming a second conducting layer in the opening to electrically connect the exposed semiconductor substrate; and removing the spacer to leave the first and the second conducting layers as a capacitor electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.