Inventor · Taipei, TW

Chi-Hui Lin

41Patents
10h-index
16Co-inventors
68Inventor score

Filing activity: Sep 18, 1997 → Nov 22, 2006

Most-cited inventions

PatentTitleAreaCited byStatus
US6734066B2 Method for fabricating split gate flash memory cell Electricity 52 Expired
US5989952A Method for fabricating a crown-type capacitor of a DRAM cell Electricity 27 Expired
US6916715B2 Method for fabricating a vertical NROM cell Electricity 25 Expired
US7022573B2 Stack gate with tip vertical memory and method for fabricating the same Electricity 19 Expired
US5872041A Method for fabricating electrodes of a semiconductor capacitor Electricity 19 Expired
US6562673B2 Method of fabricating a self-aligned split gate flash memory cell Electricity 17 Expired
US6451654B1 Process for fabricating self-aligned split gate flash memory Electricity 14 Expired
US6815290B2 Stacked gate flash memory device and method of fabricating the same Electricity 11 Expired
US6781191B2 Stacked gate flash memory device and method of fabricating the same Electricity 11 Expired
US6998313B2 Stacked gate flash memory device and method of fabricating the same Electricity 11 Expired
US6475894B1 Process for fabricating a floating gate of a flash memory in a self-aligned manner Electricity 10 Expired
US6818948B2 Split gate flash memory device and method of fabricating the same Electricity 10 Expired
US6847068B2 Floating gate and fabrication method therefor Electricity 9 Expired
US6770532B2 Method for fabricating memory unit with T-shaped gate Electricity 7 Expired
US6870216B2 Stack gate with tip vertical memory and method for fabricating the same Electricity 7 Expired
US6800526B2 Method for manufacturing a self-aligned split-gate flash memory cell Electricity 6 Expired
US7056792B2 Stacked gate flash memory device and method of fabricating the same Electricity 6 Expired
US6770520B2 Floating gate and method of fabricating the same Electricity 6 Expired
US7135731B2 Vertical DRAM and fabrication method thereof Emerging Cross-Sectional Technologies 4 Expired
US5858835A Method for fabricating a capactior in a DRAM cell Electricity 4 Expired
US6773993B2 Method for manufacturing a self-aligned split-gate flash memory cell Electricity 4 Expired
US6753223B2 Method for fabricating flash memory cell Electricity 3 Expired
US6872623B2 Floating gate and fabricating method thereof Electricity 3 Expired
US6713349B2 Method for fabricating a split gate flash memory cell Electricity 3 Expired
US6642116B2 Method for fabricating a split gate flash memory cell Electricity 3 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.