High aspect ratio gapfill process by using HDP
US5872058A · kind A · utility
326Cited by
5References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 17, 1997 |
| Grant date | Feb 16, 1999 |
| Priority date | — |
| Expiry date | Jun 17, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for filling high aspect ratio gaps on substrates uses conventional high density plasma deposition processes while reducing the concentration of the inert gas, such as Ar, to 0-13% of the total process gas flow. By reducing the inert gas concentration, sputtering or etching is reduced, resulting in reduced sidewall deposition from the sputtered material. Consequently, gaps with aspect ratios of 3.0:1 and higher can be filled without the formation of voids and without damaging circuit elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.