Sense amplifier for low read-voltage memory cells
US5872739A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 17, 1997 |
| Grant date | Feb 16, 1999 |
| Priority date | — |
| Expiry date | Apr 17, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/2273
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A sense amplifier for comparing the resistance of a reference cell connected to a reference bit line to the resistance of a data cell connected to a data bit line. The amplifier includes a first terminal for connecting the sense amplifier to the reference bit line and a second terminal for connecting the sense amplifier to the data bit line. A reference current to voltage amplifier is connected to the first terminal for generating a reference voltage related to the current flowing through the reference bit line and for maintaining the first terminal at a reference potential when the current flowing through the reference bit line is less than a first current value. A data current to voltage amplifier is connected to the second terminal for generating a data voltage related to the current flowing through the data bit line and for maintaining the second terminal at the reference potential when the current flowing through the data bit line is less than a second current value. A comparitor compares the reference and data voltages. The data current to voltage amplifier includes an operational amplifier for measuring the difference between a potential on a first conductor and the potentia…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.