Microwave plasma processing apparatus using a hybrid microwave having two different modes of oscillation or branched microwaves forming a concentric electric field
US5874706A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Sep 24, 1997 |
| Grant date | Feb 23, 1999 |
| Priority date | — |
| Expiry date | Sep 24, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05B2206/044
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ECR type plasma processing apparatus including an airtight processing chamber and a work table for supporting a semiconductor wafer thereon disposed in the processing chamber. The interior of the processing chamber is exhausted to a vacuum by an exhaust system and an active gas such as CF.sub.4 gas and an inert gas such as Ar gas are supplied into the processing chamber through nozzles. Further, a magnet is disposed around the processing chamber to generate a magnetic field perpendicular to the upper surface of the wafer and a microwave transmitting window is disposed in the ceiling of the processing chamber. Also, a microwave generated by a microwave generator is introduced into the transmitting window through a rectangular waveguide, a mode converter, and a tapered waveguide. The microwave is transmitted through the rectangular waveguide in the TE.sub.10 mode, is converted into a hybrid wave of two mode waves, i.e., a TM.sub.01 -mode wave and a TE.sub.11 -mode wave, by the mode converter, and is transmitted to the tapered waveguide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.