Arrangement for shadow-casting lithography
US5874739A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 1997 |
| Grant date | Feb 23, 1999 |
| Priority date | — |
| Expiry date | Aug 18, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3175
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An arrangement for shadow-casting lithography by focusing electrically charged particles for the purpose of imaging structures of a mask on a substrate disposed immediately to the rear thereof, comprising a particle source (2) and an extraction system (3) which produces a divergent particle beam issuing from a substantially point-shaped virtual source, and comprising a lens (6) for focusing the divergent particle beam which comprises an electrode arrangement (6a, 6b, 6c, 6d, 6e, 6f, 6g, 6h) which includes at least one electrostatic collector lens (6a to 6f in conjunction with an electrostatic diverging lens (6g, 6h) in order to be able to compensate lens errors of the collector lens in a purposeful manner with respect to lens errors of the diverging lens and to render possible a predeterminable change in the imaging scale. The diverging lens is preferably disposed in the beam direction at a distance to the rear of the collector lens in immediate proximity of the mask in order to be able to use the mask as a grating for the diverging lens.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.