Field effect transistor
US5874753A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 1997 |
| Grant date | Feb 23, 1999 |
| Priority date | — |
| Expiry date | Mar 26, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/161
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a field effect transistor including active layers having a heterojunction structure with at least two different semiconductor materials, a layer for supplying electrons is disposed opposite a drain electrode, in contact with a region of the active layers including a dopant impurity producing n type conductivity. Therefore, degradation of the electrical characteristics caused by trapping of electrons in a drain ohmic contact layer due to fluorine diffusing into the semiconductor layers is suppressed by supplying electrons from the layer opposite the drain electrode, thereby improving reliability of the field effect transistor including the heterojunction structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.