Magnet design for a sputtering chamber
US5876574A · kind A · utility
12Cited by
10References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 23, 1997 |
| Grant date | Mar 2, 1999 |
| Priority date | — |
| Expiry date | Apr 23, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3452
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In order to improve the uniformity of erosion of a sputtering chamber target during sputtering, and to prevent re-deposition of target material onto the target surface, the size and shape of the magnet pair above the target is chosen to maximize uniform erosion across the surface of the target. Re-deposition of target material onto the target is particularly a problem during plasma, high pressure sputtering.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.