Patent · US Expired

Magnet design for a sputtering chamber

US5876574A · kind A · utility

12Cited by
10References
3Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 23, 1997
Grant dateMar 2, 1999
Priority date
Expiry dateApr 23, 2017

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/3452
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

In order to improve the uniformity of erosion of a sputtering chamber target during sputtering, and to prevent re-deposition of target material onto the target surface, the size and shape of the magnet pair above the target is chosen to maximize uniform erosion across the surface of the target. Re-deposition of target material onto the target is particularly a problem during plasma, high pressure sputtering.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.