Process for selectively depositing a refractory metal silicide on silicon, and silicon wafer metallized using this process
US5876796A · kind A · utility
33Cited by
5References
21Claims
0Family size
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Key dates
| Filing date | Dec 23, 1996 |
| Grant date | Mar 2, 1999 |
| Priority date | — |
| Expiry date | Dec 23, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/259
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Process for selectively depositing a refractory metal silicide on a surface of a monocrystalline or polycrystalline silicon wafer, comprising: a step of preparing said surface, consisting in forming a silicon oxide or silicon oxynitride layer having a thickness e.ltoreq.1 nm on this surface; and, on the silicon oxide or oxynitride layer formed, a step of selective vapor deposition of a refractory metal silicide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.