Process for forming doped regions from solid phase diffusion source
US5877072A · kind A · utility
14Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 1997 |
| Grant date | Mar 2, 1999 |
| Priority date | — |
| Expiry date | Mar 31, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for doping a region in a substrate from a solid phase source. An inert gas is bubbled through a dopant containing ester and supplied to a chamber along with the gases used to form a silicon dioxide layer such as a TEOS formed layer. The flow of the inert gas can be modulated to grade the dopant concentration in the silicon dioxide layer. The dopant is diffused from the silicon dioxide layer into the substrate to form, for instance, source and drain regions in field-effect transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.