Method for enhancing oxide to nitride selectivity through the use of independent heat control
US5880036A · kind A · utility
15Cited by
33References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 15, 1993 |
| Grant date | Mar 9, 1999 |
| Priority date | — |
| Expiry date | Nov 15, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76802
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for controlling the etch of a silicon dioxide layer at a high etch rate and high selectivity with respect to silicon nitride, particularly in a multilayer structure, by maintaining various portions of the etch chamber at elevated temperatures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.