Method for increasing the refresh time of the DRAM
US5882984A · kind A · utility
3Cited by
6References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 9, 1996 |
| Grant date | Mar 16, 1999 |
| Priority date | — |
| Expiry date | Oct 9, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76202
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is a method for increasing the refresh time of DRAM. This invention is for decreasing the stress between the bird's beak of field oxide and silicon substrate by using fluorine ion implant before field oxidation and the optimal structure of LOCOS to effectively preventing the current leakage from the bird's beak of field oxide. Therefore, this invention can increase the refresh time of DRAM and greatly enhance the performance in DRAM.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.