Method of fabricating integrated semiconductor devices comprising a chemoresistive gas microsensor
US5883009A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 1997 |
| Grant date | Mar 16, 1999 |
| Priority date | — |
| Expiry date | Jul 30, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/764
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The chemoresistive gas sensor comprises a heating element integrated in a dedicated SOI substrate having an air gap in the intermediate oxide layer between two wafers of monocrystalline silicon. A sensitive element of tin oxide is formed over the heating element and separated from it by a dielectric insulating and protective layer. A trench formed at the end of the fabrication of the device, extends from the surface of the wafer in which the heating element is integrated, up to the air gap to mechanically separate and insulate the sensitive element from the rest of the chip, thereby improving the mechanical characteristics sensitivity and response of the sensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.