Method for using oxygen plasma treatment on a dielectric layer
US5883015A · kind A · utility
1Cited by
5References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 3, 1997 |
| Grant date | Mar 16, 1999 |
| Priority date | — |
| Expiry date | Jul 3, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The method for depositing a dielectric layer can be used to evenly deposit the dielectric layer to be applied to a semiconductor device. The method includes steps of: a) providing a substrate; b) depositing a first dielectric film on the subtrate; c) introducing an oxygen plasma for eliminating an uneven distribution of charges on a surface of the substrate; and d) forming a second dielectric film on the first dielectric film treated with the oxygen plasma for obtaining the dielectric layer having a uniform thickness on the substrate,
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.