Ion implantation apparatus and a method of monitoring high energy neutral contamination in an ion implantation process
US5883391A · kind A · utility
30Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 16, 1997 |
| Grant date | Mar 16, 1999 |
| Priority date | — |
| Expiry date | Jun 16, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/304
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
High energy neutral contamination in an ion implanter can be caused by beam ions neutralised as they are temporarily accelerated at an electrode before being decelerated again to the desired implant energy. This occurs for example in the decel lens arrangement which includes an electrode at a relatively high negative potential to provide the required focusing. The level of this contamination is monitored by measuring the current drain on this negative field electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.