Method and apparatus for purging the back side of a substrate during chemical vapor processing
US5884412A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 1996 |
| Grant date | Mar 23, 1999 |
| Priority date | — |
| Expiry date | Jul 24, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/455
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of processing a disk-shaped substrate, or wafer, during a chemical vapor process includes a backside purge of the substrate with a purge gas. The backside purge is obtained by spinning the substrate about a central axis, directing a flow of the purge gas over the backside of the spinning substrate, and causing the purge gas to flow in an outward radial direction with the spinning substrate. An apparatus in a vapor processing system structured for conducting the backside purge includes a support mechanism structured and arranged to support the substrate and spin the substrate about a central axis, and a conduit coupled to a source of purge gas, structured and arranged to direct a flow of the purge gas over a backside of the substrate while the substrate is spinning such that the spinning substrate causes the purge gas to flow radially outward.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.