Method and apparatus for depositing deep UV photoresist films
US5885751A · kind A · utility
29Cited by
10References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 8, 1996 |
| Grant date | Mar 23, 1999 |
| Priority date | — |
| Expiry date | Nov 8, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0757
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An improved method and apparatus for forming a plasma-polymerized methylsilane (PPMS) photo-sensitive resist material includes the steps of pressurizing the chamber to between about 1 to about 2 Torr, heating the substrate to between about 50.degree. C. and about 200.degree. C., and plasma-polymerizing the precursor methylsilane gas to deposit a stable film having high-photosensitivity at high deposition rates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.