Photoresist film for deep ultra violet and method for forming photoresist film pattern using the same
US5888698A · kind A · utility
5Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 28, 1997 |
| Grant date | Mar 30, 1999 |
| Priority date | — |
| Expiry date | May 28, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/111
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A photoresist film superior in etch resistance and PED stability, as well as transmittance to deep UV, having a backbone of polymethylmethacrylate grafted with piperidine moiety of which the nitrogen atom acts as a base.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.