Method for fabricating capacitors of a dynamic random access memory
US5888866A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 8, 1998 |
| Grant date | Mar 30, 1999 |
| Priority date | — |
| Expiry date | May 8, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/318
Abstract
A method for fabricating capacitors of a DRAM by employing the liquid-phase deposition. Since the working temperature required for performing liquid-phase deposition is low, selective deposition can be performed on the area not covered by photoresist with the presence of the photoresist layer. The foregoing method comprises: filling up the contact hole with photoresist, and keeping up coating photoresist upward and horizontally; selectively depositing oxide on the area, that is not coated with photoresist, by utilizing the liquid-phase deposition process; removing the photoresist for forming an opening which forms the profile of the lower electrode of a capacitor; forming a conductive layer on the inner walls of the opening, and having the contact hole filled as well to form the lower electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.