Group III nitride compound semiconductor laser diodes
US5889806A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 1997 |
| Grant date | Mar 30, 1999 |
| Priority date | — |
| Expiry date | Aug 8, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34333
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser diode using Group III nitride compound semiconductor consists of In.sub.0.2 Ga.sub.0.8 N/GaN SQW active layer 5, a pair of GaN guide layers 41 and 62, sandwiching the active layer with wider forbidden band than the active layer, and a pair of Al.sub.0.08 Ga.sub.0.92 N cladding layer 4 and 71, sandwiching a pair of the guide layers, and the LD confines carriers and light separately. Al.sub.0.15 Ga.sub.0.75 N stopper layers 41 and 62 with wider forbidden band than the guide layers are formed in some portion of each of the guide layers 41 and 62 in parallel to the active layer. As a result, carriers are confined in the active layer and the laser output of the LD is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.