Apparatus for rapid thermal processing of a wafer
US5893952A · kind A · utility
18Cited by
17References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 21, 1997 |
| Grant date | Apr 13, 1999 |
| Priority date | — |
| Expiry date | Oct 21, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/095
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Rapid Thermal Processing of a semiconductor wafer is performed by scanning a laser beam across a silicon dioxide film in contact with a surface of the wafer. The silicon dioxide film absorbs the energy from the laser beam and converts the energy to heat. The heat, in turn, is transferred to the wafer. Temperature feedback can be obtained to increase control and uniformity of temperatures across the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.