Method of fabricating semiconductor devices and the devices
US5895260A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 1996 |
| Grant date | Apr 20, 1999 |
| Priority date | — |
| Expiry date | Mar 29, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
Fabricating a device including a Schottky diode by growing a dielectric film on a SiC substrate structure and forming an ohmic contact on the opposite surface of the substrate structure by depositing a layer of metal and annealing at a temperature above 900.degree. C. Implanting doping material in the substrate structure through spaced apart openings to form high resistivity areas and depositing a dielectric layer on the dielectric film to define a contact opening positioned between the spaced apart high resistivity areas. Annealing the implant at a temperature less than approximately 400.degree. C. to reduce reverse leakage current and depositing metal in the contact opening to form a Schottky contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.