Method and apparatus for etching film layers on large substrates
US5895549A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 1996 |
| Grant date | Apr 20, 1999 |
| Priority date | — |
| Expiry date | Oct 16, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S414/141
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A chamber for etching substrates includes a support member therein which is suspended from a sidewall of the chamber. The support member includes multiple planar faces for receiving substrates thereon, and is rotatable about a horizontal axis to position the multiple planar faces in a horizontal position to place the substrates on the planar faces or remove the substrates from the planar faces, and a second position to place the substrates in a non-horizontal position for processing. A clamping and lifting apparatus is provided on the support member that is positionable, with respect to the support member, in an extended position to permit a substrate to be positioned between the clamping and lifting apparatus and the support member, and in a retracted position to clamp the substrate to the support member. The chamber is especially adapted to etching substrates requiring high power densities, such as substrates having aluminum films, without causing arcing. The chamber may include: insulative members disposed between the support member and the clamping and lifting apparatus, spacers disposed in the clamping and lifting apparatus for providing a gap between the clamping and lifting …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.