Method and apparatus for improving refractive index of dielectric films
US5897711A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 22, 1995 |
| Grant date | Apr 27, 1999 |
| Priority date | — |
| Expiry date | Dec 22, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and an apparatus for depositing a dielectric film on a substrate in a plasma process chamber wherein the uniformity of the refractive index of the film is improved. The method involves introducing an oxygen reactant and a silicon reactant into the process chamber and generating a plasma, contacting the substrate with the plasma and depositing a SiO.sub.x film thereon. To control uniformity of the refractive index of the film, a second oxygen reactant is injected locally at a position at which it is desired to lower the refractive index. The second oxygen reactant can be O.sub.2 which is injected at the periphery of the substrate. The gas injection apparatus includes a substrate support below the substrate and a deposition shield surrounding the substrate. The shield contains gas injection outlets directed toward the periphery of the substrate for supplying the O.sub.2 to a region above the outer periphery of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.