RF power device having voltage controlled linearity
US5898198A · kind A · utility
41Cited by
7References
48Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 6, 1997 |
| Grant date | Apr 27, 1999 |
| Priority date | — |
| Expiry date | Aug 6, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A linear MOSFET device includes a shield plate positioned between a drain and an overlying gate. A voltage bias is applied to the shield plate to maintain linear operation of the device for RF power amplification. An AC ground is preferably connected to the shield plate. The voltage bias can be varied for matching of parallel connected devices, for responding to peak input signals, and for temperature compensation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.